Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
http://onsemi.com
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off-State Voltage
V
Volts
DRM,
(T = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
V
RRM
J
200
400
600
2N6073A,B
2N6075A,B
3
2
1
*On-State RMS Current (T = 85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
4.0
Amps
Amps
C
T(RMS)
TO–225AA
(formerly TO–126)
CASE 077
*Peak Non–repetitive Surge Current
I
30
TSM
(One Full cycle, 60 Hz, T = +110°C)
J
STYLE 5
2
2
Circuit Fusing Considerations
(t = 8.3 ms)
I t
3.7
10
A s
PIN ASSIGNMENT
*Peak Gate Power
P
Watts
Watt
Volts
°C
GM
1
2
3
Main Terminal 1
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
Main Terminal 2
Gate
*Average Gate Power
P
0.5
5.0
G(AV)
(t = 8.3 ms, T = 85°C)
C
*Peak Gate Voltage
V
GM
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
ORDERING INFORMATION
*Operating Junction Temperature Range
T
J
–40 to
+110
Device
2N6071A
2N6071B
2N6073A
2N6073B
Package
TO225AA
TO225AA
TO225AA
TO225AA
Shipping
500/Box
500/Box
500/Box
500/Box
*Storage Temperature Range
T
–40 to
+150
°C
stg
(2)
Mounting Torque (6-32 Screw)
—
8.0
in. lb.
*Indicates JEDEC Registered Data.
(1) V and V for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
DRM RRM
2N6075A
2N6075B
TO225AA
TO225AA
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
May, 2000 – Rev. 3
2N6071/D