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2N5885G PDF预览

2N5885G

更新时间: 2024-01-31 11:05:14
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 95K
描述
Complementary Silicon High−Power Transistors

2N5885G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):4
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N5885G 数据手册

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2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
2N5884 and 2N5886 are Preferred Devices  
Complementary Silicon  
High−Power Transistors  
Complementary silicon high−power transistors are designed for  
general−purpose power amplifier and switching applications.  
http://onsemi.com  
Features  
25 AMPERE COMPLEMENTARY  
SILICON POWER TRANSISTORS  
60 − 80 VOLTS, 200 WATTS  
Low Collector−Emitter Saturation Voltage −  
V
= 1.0 Vdc, (max) at I = 15 Adc  
C
CE(sat)  
Low Leakage Current  
= 1.0 mAdc (max) at Rated Voltage  
I
CEX  
Excellent DC Current Gain −  
= 20 (min) at I = 10 Adc  
h
FE  
C
High Current Gain Bandwidth Product −  
f = 4.0 MHz (min) at I = 1.0 Adc  
t
C
Pb−Free Packages are Available*  
TO−204AA (TO−3)  
CASE 1−07  
MAXIMUM RATINGS (Note 1)  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N5883, 2N5885  
V
Vdc  
CEO  
MARKING DIAGRAM  
60  
80  
2N5884, 2N5886  
Collector−Base Voltage  
2N5883, 2N5885  
V
Vdc  
CB  
60  
80  
2N5884, 2N5886  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
2N588xG  
AYYWW  
MEX  
Collector Current −  
Continuous  
Peak  
I
C
B
25  
50  
Base Current  
I
7.5  
Adc  
Total Device Dissipation @ T = 25°C  
P
200  
1.15  
W
W/°C  
C
D
Derate above 25°C  
2N588x = Device Code  
x = 3, 4, 5, or 6  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +200  
°C  
J
stg  
G
A
YY  
WW  
MEX  
= Pb−Free Package  
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
Characteristic  
= Work Week  
Symbol  
Max  
Unit  
= Country of Origin  
Thermal Resistance, Junction−to−Case  
q
0.875  
°C/W  
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1. Indicates JEDEC registered data. Units and conditions differ on some  
parameters and re−registration reflecting these changes has been requested.  
All above values most or exceed present JEDEC registered data.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 11  
2N5883/D  
 

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