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2N4920G PDF预览

2N4920G

更新时间: 2024-01-25 07:14:40
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 121K
描述
Medium-Power Plastic PNP Silicon Transistors

2N4920G 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.76
最大集电极电流 (IC):1 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):30 W
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:0.6 VBase Number Matches:1

2N4920G 数据手册

 浏览型号2N4920G的Datasheet PDF文件第2页浏览型号2N4920G的Datasheet PDF文件第3页浏览型号2N4920G的Datasheet PDF文件第4页浏览型号2N4920G的Datasheet PDF文件第5页浏览型号2N4920G的Datasheet PDF文件第6页 
2N4918 − 2N4920* Series  
Preferred Device  
Medium−Power Plastic PNP  
Silicon Transistors  
These medium−power, high−performance plastic devices are  
designed for driver circuits, switching, and amplifier applications.  
http://onsemi.com  
Features  
Pb−Free Package is Available**  
3.0 A, 40−80 V, 30 W  
GENERAL PURPOSE  
POWER TRANSISTORS  
Low Saturation Voltage − V  
= 0.6 Vdc (Max) @ I = 1.0 A  
C
CE(sat)  
Excellent Power Dissipation Due to Thermopad Construction,  
P = 30 W @ T = 25_C  
D
C
Excellent Safe Operating Area  
Gain Specified to I = 1.0 A  
C
Complement to NPN 2N4921, 2N4922, 2N4923  
MAXIMUM RATINGS  
TO−225  
CASE 077  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Collector − Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
2N4918  
2N4919  
2N4920  
40  
60  
80  
3
2
1
MARKING DIAGRAM  
Collector − Base Voltage  
Emitter − Base Voltage  
Vdc  
2N4918  
2N4919  
2N4920  
40  
60  
80  
YWW  
2N  
49xx  
5.0  
Vdc  
Adc  
Collector Current − Continuous  
(Note 1)  
I
C
1.0  
3.0  
xx  
Y
WW  
= 18, 19, 20  
= Year  
= Work Week  
(Note 2)  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25°C  
P
D
30  
W
A
Derate above 25°C  
0.24  
W/°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
*Preferred devices are recommended choices for future  
use and best overall value.  
1. The 1.0 A max I value is based upon JEDEC current gain requirements. The  
C
3.0 A max value is based upon actual current−handling capability of the  
device (See Figure 5).  
2. Indicates JEDEC Registered Data for 2N4918 Series.  
THERMAL CHARACTERISTICS (Note 3)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
4.16  
°C/W  
q
JC  
Junction−to−Case  
3. Recommend use of thermal compound for lowest thermal resistance.  
**For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 11  
2N4918/D  
 

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