2N4918G

更新时间： 2024-01-08 00:06:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
6页	117K
描述
Medium-Power Plastic PNP Silicon Transistors

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技术参数
数据手册

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2N4918G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N4918G 数据手册

2N4918 − 2N4920* Series

Preferred Device

Medium−Power Plastic PNP

Silicon Transistors

These medium−power, high−performance plastic devices are

designed for driver circuits, switching, and amplifier applications.

http://onsemi.com

Features

• Pb−Free Package is Available**

3.0 A, 40−80 V, 30 W

GENERAL PURPOSE

POWER TRANSISTORS

• Low Saturation Voltage − V

= 0.6 Vdc (Max) @ I = 1.0 A

CE(sat)

• Excellent Power Dissipation Due to Thermopad Construction,

P = 30 W @ T = 25_C

• Excellent Safe Operating Area

• Gain Specified to I = 1.0 A

• Complement to NPN 2N4921, 2N4922, 2N4923

MAXIMUM RATINGS

TO−225

CASE 077

STYLE 1

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

CEO

CBO

EBO

Vdc

2N4918

2N4919

2N4920

MARKING DIAGRAM

Collector − Base Voltage

Emitter − Base Voltage

Vdc

2N4918

2N4919

2N4920

YWW

49xx

5.0

Vdc

Adc

Collector Current − Continuous

(Note 1)

1.0

3.0

= 18, 19, 20

= Year

= Work Week

(Note 2)

Base Current

1.0

Adc

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.24

W/°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

*Preferred devices are recommended choices for future

use and best overall value.

1. The 1.0 A max I value is based upon JEDEC current gain requirements. The

3.0 A max value is based upon actual current−handling capability of the

device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

THERMAL CHARACTERISTICS (Note 3)

Characteristic

Symbol

Max

Unit

Thermal Resistance,

4.16

°C/W

Junction−to−Case

3. Recommend use of thermal compound for lowest thermal resistance.

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

July, 2004 − Rev. 11

2N4918/D

12 3 4 5 6

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