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2N4918 PDF预览

2N4918

更新时间: 2024-02-20 19:13:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 117K
描述
GENERAL.PURPOSE POWER TRANSISTORS

2N4918 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.69JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2N4918 数据手册

 浏览型号2N4918的Datasheet PDF文件第2页浏览型号2N4918的Datasheet PDF文件第3页浏览型号2N4918的Datasheet PDF文件第4页浏览型号2N4918的Datasheet PDF文件第5页浏览型号2N4918的Datasheet PDF文件第6页浏览型号2N4918的Datasheet PDF文件第7页 
ON Semiconductor)  
2N4918  
thru  
Medium-Power Plastic PNP  
Silicon Transistors  
*
2N4920  
. . . designed for driver circuits, switching, and amplifier  
applications. These high–performance plastic devices feature:  
*ON Semiconductor Preferred Device  
3 AMPERE  
GENERAL–PURPOSE  
POWER TRANSISTORS  
40–80 VOLTS  
Low Saturation Voltage —  
V
= 0.6 Vdc (Max) @ I = 1.0 Amp  
CE(sat)  
Excellent Power Dissipation Due to Thermopad Construction —  
C
30 WATTS  
P
= 30 W @ T = 25_C  
D
C
Excellent Safe Operating Area  
Gain Specified to I = 1.0 Amp  
C
Complement to NPN 2N4921, 2N4922, 2N4923  
*MAXIMUM RATINGS  
Ratings  
Symbol 2N4918 2N4919 2N4920  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
40  
40  
60  
60  
80  
80  
CEO  
3
2
1
V
CB  
EB  
CASE 77–09  
TO–225AA TYPE  
V
5.0  
Collector Current — Continuous (1)  
I *  
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25°C  
Derate above 25_C  
P
D
30  
0.24  
Watts  
W/_C  
C
Operating & Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
THERMAL CHARACTERISTICS (2)  
Characteristic  
Symbol  
Max  
4.16  
Unit  
Thermal Resistance, Junction to Case  
θ
_C/W  
JC  
*Indicates JEDEC Registered Data for 2N4918 Series.  
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.  
C
The 3.0 Amp maximum value is based upon actual current–handling capability of the  
device (See Figure 5).  
(2) Recommend use of thermal compound for lowest thermal resistance.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N4918/D  

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