2N3773G

更新时间： 2024-02-17 21:07:04

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
6页	97K
描述
Complementary Silicon Power Transistors

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2N3773G 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	TO-3	包装说明：	LEAD FREE, CASE 1-07, TO-3, 2 PIN
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.67	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	140 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-204AA
JESD-30 代码：	O-MBFM-P2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	150 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	PIN/PEG
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N3773G 数据手册

NPN 2N3773*, PNP 2N6609

Preferred Device

Complementary Silicon

Power Transistors

The 2N3773 and 2N6609 are PowerBaset power transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, DC−DC converters or

inverters.

http://onsemi.com

16 A COMPLEMENTARY

POWER TRANSISTORS

140 V, 150 W

Features

• Pb−Free Packages are Available**

• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

MARKING

DIAGRAM

= 15 (Min) @ 8.0 A, 4.0 V

CE(sat)

= 1.4 V (Max) @ I = 8.0 A, I = 0.8 A

C B

• For Low Distortion Complementary Designs

2Nxxxx

MEX

MAXIMUM RATINGS (Note 1)

AYYWW

Rating

Symbol

Value

Unit

TO−204

CASE 1−07

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

140

160

Vdc

Adc

CEO

CEX

CBO

EBO

xxxx

= 3773 or 6609

= Assembly Location

= Year

= Work Week

Collector Current

− Continuous

− Peak (Note 2)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Base Current

− Continuous

− Peak (Note 2)

Adc

Total Power Dissipation @ T = 25°C

Derate above 25°C

150

0.855

W/°C

*Preferred devices are recommended choices for future

use and best overall value.

Operating and Storage Junction

Temperature Range

T , T

−65 to +200

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

1.17

°C/W

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

July, 2004 − Rev. 10

2N3773/D

12 3 4 5 6

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