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2N3055AG PDF预览

2N3055AG

更新时间： 2024-02-07 07:36:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
6页 89K
描述
Complementary Silicon High-Power Transistors

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2N3055AG 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.59外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-3JESD-30 代码：O-MBFM-P2
元件数量：1端子数量：2
封装主体材料：METAL封装形状：ROUND
封装形式：FLANGE MOUNT极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：2.5 MHzBase Number Matches：1

2N3055AG 数据手册

 浏览型号2N3055AG的Datasheet PDF文件第2页浏览型号2N3055AG的Datasheet PDF文件第3页浏览型号2N3055AG的Datasheet PDF文件第4页浏览型号2N3055AG的Datasheet PDF文件第5页浏览型号2N3055AG的Datasheet PDF文件第6页 
2N3055A (NPN),  
MJ15015 (NPN),  
MJ15016 (PNP)  
MJ15015 and MJ15016 are Preferred Devices  
Complementary Silicon  
High−Power Transistors  
http://onsemi.com  
These PowerBaset complementary transistors are designed for  
high power audio, stepping motor and other linear applications. These  
devices can also be used in power switching circuits such as relay or  
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads  
requiring higher safe operating area than the 2N3055.  
15 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
60, 120 VOLTS − 115, 180 WATTS  
• Current−Gain − Bandwidth−Product @ I = 1.0 Adc  
C
f = 0.8 MHz (Min) − NPN  
T
= 2.2 MHz (Min) − PNP  
• Safe Operating Area − Rated to 60 V and 120 V, Respectively  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
V
CEO  
Vdc  
TO−204AA (TO−3)  
CASE 1−07  
2N3055A  
MJ15015, MJ15016  
60  
120  
STYLE 1  
Collector−Base Voltage  
V
Vdc  
Vdc  
CBO  
2N3055A  
100  
200  
MJ15015, MJ15016  
MARKING DIAGRAMS  
Collector−Emitter Voltage Base  
Reversed Biased  
V
CEV  
2N3055A  
100  
200  
MJ15015, MJ15016  
Emitter−Base Voltage  
Collector Current − Continuous  
Base Current  
V
7.0  
15  
Vdc  
Adc  
Adc  
EBO  
I
C
2N3055AG  
AYWW  
MEX  
MJ1501xG  
AYWW  
MEX  
I
7.0  
B
Total Device Dissipation @ T = 25_C  
P
115  
0.65  
W
W/_C  
C
D
Derate above 25_C  
2N3055A  
180  
1.03  
Total Device Dissipation @ T = 25_C  
C
Derate above 25_C  
MJ15015, MJ15016  
2N3055A = Device Code  
MJ1501x = Device Code  
x = 5 or 6  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +200  
_C  
J
stg  
G
A
Y
WW  
MEX  
= Pb−Free Package  
= Assembly Location  
= Year  
= Work Week  
= Country of Origin  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max Max Unit  
Thermal Resistance, Junction−to−Case  
R
q
JC  
1.52 0.98 _C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data. (2N3055A)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 6  
2N3055A/D  
 
123456

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