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2N2089RLRE PDF预览

2N2089RLRE

更新时间: 2024-02-05 09:47:54
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
5页 84K
描述
Amplifier Transistors NPN Silicon

2N2089RLRE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.89
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):450
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

2N2089RLRE 数据手册

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2N5088, 2N5089  
Amplifier Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
3 COLLECTOR  
2
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector − Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
1 EMITTER  
2N5088  
2N5089  
30  
25  
Collector − Base Voltage  
Vdc  
2N5088  
2N5089  
35  
30  
TO−92  
CASE 29  
STYLE 1  
Emitter − Base Voltage  
3.0  
50  
Vdc  
Collector Current − Continuous  
I
mAdc  
C
1
1
2
2
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
1.5  
12  
W
mW/°C  
C
D
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
2N  
508x  
AYWW G  
G
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
200  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
83.3  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x = 8 or 9  
A = Assembly Location  
Y = Year  
WW = Work Week  
G = Pb−Free Package  
1. R  
is measured with the device soldered into a typical printed circuit board.  
q
JA  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2N5088G  
TO−92  
(Pb−Free)  
5000 Units/Bulk  
2N2088RLRAG  
TO−92  
2000/Tape & Reel  
(Pb−Free)  
2N5089G  
TO−92  
(Pb−Free)  
5000 Units/Bulk  
2N2089RLRE  
TO−92  
2000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 4  
2N5088/D  
 

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