5秒后页面跳转
54F219DLQB PDF预览

54F219DLQB

更新时间: 2024-02-01 14:42:07
品牌 Logo 应用领域
美国国家半导体 - NSC 存储
页数 文件大小 规格书
8页 166K
描述
IC 16 X 4 STANDARD SRAM, 32 ns, CDIP16, Static RAM

54F219DLQB 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:16
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.79
最长访问时间:23 nsJESD-30 代码:R-CDIP-T16
内存密度:64 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端子数量:16字数:16 words
字数代码:16工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:16X4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子形式:THROUGH-HOLE
端子位置:DUALBase Number Matches:1

54F219DLQB 数据手册

 浏览型号54F219DLQB的Datasheet PDF文件第2页浏览型号54F219DLQB的Datasheet PDF文件第3页浏览型号54F219DLQB的Datasheet PDF文件第4页浏览型号54F219DLQB的Datasheet PDF文件第5页浏览型号54F219DLQB的Datasheet PDF文件第6页浏览型号54F219DLQB的Datasheet PDF文件第7页 
November 1994  
54F/74F219  
64-Bit Random Access Memory with TRI-STATE  
Outputs  
É
General Description  
Features  
Y
TRI-STATE outputs for data bus applications  
Buffered inputs minimize loading  
Address decoding on-chip  
The ’F219 is a high-speed 64-bit RAM organized as a  
16-word by 4-bit array. Address inputs are buffered to mini-  
mize loading and are fully decoded on-chip. The outputs are  
TRI-STATE and are in the high-impedance state whenever  
the Chip Select (CS) input is HIGH. The outputs are active  
only in the Read mode. This device is similar to the ’F189  
but features non-inverting, rather than inverting, data out-  
puts.  
Y
Y
Y
Y
Diode clamped inputs minimize ringing  
Available in SOIC (300 mil only)  
Package  
Commercial  
74F219PC  
Military  
Package Description  
Number  
N16E  
J16A  
16-Lead (0.300 Wide) Molded Dual-In-Line  
×
54F219DL (Note 2)  
16-Lead Ceramic Dual-In-Line  
74F219SC (Note 1)  
74F219SJ (Note 1)  
M16B  
M16D  
W16A  
E20A  
16-Lead (0.300 Wide) Molded Small Outline, JEDEC  
×
16-Lead (0.300 Wide) Molded Small Outline, EIAJ  
×
54F219FL (Note 2)  
54F219LL (Note 2)  
16-Lead Cerpack  
20-Lead Ceramic Leadless Chip Carrier, Type C  
e
Note 1: Devices also available in 13 reel. Use suffix  
SCX and SJX.  
×
Note 2: Military grade device with environmental and burn-in processing. Use suffix  
e
DLQB, FLQB and LLQB.  
Logic Symbol  
Connection Diagrams  
Pin Assignment for  
DIP, SOIC and Flatpak  
Pin Assignment  
for LCC  
TL/F/9500–1  
TL/F/9500–2  
TL/F/9500–3  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/F/9500  
RRD-B30M105/Printed in U. S. A.  

与54F219DLQB相关器件

型号 品牌 描述 获取价格 数据表
54F219DM FAIRCHILD Standard SRAM, 16X4, 23ns, CMOS, CDIP16, CERAMIC, DIP-16

获取价格

54F219DMQB FAIRCHILD Standard SRAM, 16X4, 23ns, CMOS, CDIP16, CERAMIC, DIP-16

获取价格

54F219FL NSC 64-Bit Random Access Memory with TRI-STATEE Outputs

获取价格

54F219FL FAIRCHILD Standard SRAM, 16X4, 32ns, TTL, CDFP16, CERPACK-16

获取价格

54F219FLQB FAIRCHILD Standard SRAM, 16X4, 32ns, TTL, CDFP16, CERPACK-16

获取价格

54F219FLQB NSC IC 16 X 4 STANDARD SRAM, 32 ns, CDFP16, Static RAM

获取价格