Datasheet > 2N7000

2N7000

更新时间： 2024-01-18 22:06:49

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体晶体管开关
页数	文件大小	规格书
10页	209K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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2N7000 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-W3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.82
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.3 A
最大漏源导通电阻：	5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-W3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

2N7000 数据手册

March 1993

2N7000/2N7002/NDF7000A/NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Efficient high density cell design approaching

(3 million/in )

These n-channel enhancement mode field effect transistors

are produced using National’s very high cell density third

generation DMOS technology. These products have been

designed to minimize on-state resistance provide rugged

and reliable performance and fast switching. They can be

used, with a minimum of effort, in most applications requir-

ing up to 400 mA DC and can deliver pulsed currents up to

2A. This product is particularly suited to low voltage, low

current applications, such as small servo motor controls,

power MOSFET gate drivers, and other switching applica-

tions.

Voltage controlled small signal switch

Rugged

High saturation current

Low R

(ON)

TL/G/11378–2

TL/G/11378–1

TO-92

7000 Series

TO-236 AB

(SOT-23)

7002 Series

TL/G/11378–3

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

2N7000

2N7002

NDF7000A

NDS7002A

Units

DSS

DGR

GSS

Drain-Gate Voltage (R

Gate-Source Voltage

1 MX)

400

Drain CurrentÐContinuous

200

500

400

3.2

115

800

200

1.6

280

1500

300

2.4

ÐPulsed

2000

625

25 C

Total Power Dissipation

Derating above 25 C

mW/ C

65 to 150

T , T

J STG

Operating and Storage Temperature Range

55 to 150

Maximum Lead Temperature for Soldering

300

Purposes, (/16* from Case for 10 Seconds

1995 National Semiconductor Corporation

TL/G/11378

RRD-B30M115/Printed in U. S. A.

12 3 4 5 6 7...10

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