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27C16Q550 PDF预览

27C16Q550

更新时间: 2022-11-24 21:50:18
品牌 Logo 应用领域
美国国家半导体 - NSC 军事可编程只读存储器
页数 文件大小 规格书
8页 111K
描述
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

27C16Q550 数据手册

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January 1989  
27C16  
16,384-Bit (2048 x 8) UV Erasable CMOS PROM  
Military Qualified  
General Description  
Features  
Y
Access time down to 450 ns  
The 27C16 is a high speed 16K UV erasable and electrically  
reprogrammable CMOS EPROM, ideally suited for applica-  
tions where fast turnaround, pattern experimentation and  
low power consumption are important requirements.  
Y
Low CMOS power consumption  
Ð Active Power: 26.25 mW max  
Ð Standby Power: 0.53 mW max (98% savings)  
Performance compatible to NSC800TM CMOS micro-  
processor  
Y
The 27C16 is packaged in a 24-pin dual-in-line package with  
transparent lid. The transparent lid allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pattern. A  
new pattern can then be written into the device by following  
the programming procedure.  
Y
Y
Y
Y
Y
Y
Y
Single 5V power supply  
Pin compatible to MM2716 and higher density EPROMs  
StaticÐno clocks required  
This EPROM is fabricated with the reliable, high volume,  
2
TTL compatible inputs/outputs  
time proven, P CMOSTM silicon gate technology.  
TRI-STATE output  
É
Windowed DIP Package  
The 27C16 specified on this data sheet is fully compliant  
with MIL-STD-883, Revision C.  
Specifications guaranteed over full military temperature  
b
a
range ( 55 C to 125 C)  
§
§
Block Diagram  
Pin Names  
Addresses  
A0A10  
CE  
Chip Enable  
Output Enable  
Outputs  
OE  
O O  
0
7
PGM  
NC  
Program  
No Connect  
TL/D/10329–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
2
NS800TM are P CMOSTM trademarks of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/D/10329  
RRD-B30M105/Printed in U. S. A.  

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