是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.19 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6802SCC5205/019 | INFINEON | Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
获取价格 |
|
2N6802U | MICROSEMI | N-CHANNEL MOSFET |
获取价格 |
|
2N6804 | MICROSEMI | P-CHANNEL MOSFET |
获取价格 |
|
2N6804_12 | MAS | This 2N6804 switching transistor is military qualified up to the JANTXV level for high-rel |
获取价格 |
|
2N6804E3 | MICROSEMI | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Met |
获取价格 |
|
2N6804PBF | INFINEON | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta |
获取价格 |