是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | LCC | 包装说明: | CHIP CARRIER, R-CQCC-N15 |
针数: | 18 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.61 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
JESD-609代码: | e4 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子面层: | GOLD OVER NICKEL | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6782_01 | SEME-LAB | N–CHANNEL POWER MOSFET ENHANCEMENT MODE |
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2N6782_11 | MICROSEMI | N-CHANNEL MOSFET |
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2N6782_12 | MAS | This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up t |
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2N6782E3 | MICROSEMI | Power Field-Effect Transistor |
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2N6782EBPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6782EC | INFINEON | Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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