类别: | Diodes | 配置: | Single |
Channel Polarity: | N | ESD: | Y |
Max PD(W): | 0.25 | Min PD(W): | 50 |
Max VGS (V): | ±20 | Max ID(A): | 1.3 |
Max IGSS(uA): | ±10 | Max VGS(th) (V): | 1 |
RDS(on)(mΩ) @ 25℃ 10V Typ: | 1200 | RDS(on)(mΩ) @ 25℃ 10V Max: | 1500 |
RDS(on)(mΩ) @ 25℃ 4.5V Typ: | 1500 | RDS(on)(mΩ) @ 25℃ 4.5V Max: | 2500 |
AEC Qualified: | No | 最高工作温度: | 150 |
最低工作温度: | -55 | MSL等级: | 1 |
生命周期: | Active | 是否无铅: | Yes |
符合Reach: | Yes | 符合RoHS: | Yes |
ECCN代码: | EAR99 | Package Outlines: | SOT-323 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5003_02 | SEMICOA | Silicon PNP Transistor |
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2N5003DW | Galaxy Microelectronics | 50V, Dual N Channel, Small Signal MOSFETs |
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2N5003L | Galaxy Microelectronics | 3.3A, 50V, 0.15W, N Channel, Small Signal MOSFETs |
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2N5003M | Galaxy Microelectronics | 0.3A, 50V, 0.15W, N Channel, Small Signal MOSFETs |
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2N5003T | Galaxy Microelectronics | 2.3A, 50V, 0.15W, N Channel, Small Signal MOSFETs |
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2N5003V | Galaxy Microelectronics | 50V, Dual N Channel, Small Signal MOSFETs |
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