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11EFS2 PDF预览

11EFS2

更新时间: 2022-01-13 01:51:45
品牌 Logo 应用领域
NIEC 二极管
页数 文件大小 规格书
2页 28K
描述
Low Forward Voltage drop Diode

11EFS2 数据手册

 浏览型号11EFS2的Datasheet PDF文件第2页 
FRD Type : 11EFS2  
FEATURES  
OUTLINE DRAWING  
* Miniature Size  
* Ultra-Fast Recovery  
* Low Forward Voltage Drop  
* Low Power Loss, High Efficiency  
* High Surge Capability  
* 200 Volts through 400 Volts Types Available  
* 26mm and 52mm Inside Tape Spacing  
Maximum Ratings  
Approx Net Weight:0.17g  
11EFS2  
Symbol  
Unit  
Rating  
Repetitive Peak Reverse Voltage  
Non-repetitive Peak Reverse Voltage  
VRRM  
VRSM  
200  
220  
V
V
0.8 Ta=40°C Without Fin  
1
Average Rectified  
Output Current  
50Hz Half Sine  
WaveResistive Load  
IO  
A
1
Ta=32°C P.C.B.Mounted 2  
RMS Forward Current  
Surge Forward Current  
Operating JunctionTemperature  
Range  
IF(RMS)  
IFSM  
1.57  
A
A
30 50Hz Half Sine Wave,1cycle,Non-repetitive  
Tjw  
- 40 to + 150  
°C  
°C  
Storage Temperature Range  
Tstg  
- 40 to + 150  
Electrical Thermal Characteristics  
Characteristics  
Symbol  
Conditions  
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM= 1 A  
Min Typ  
Max  
Unit  
Peak Reverse Current  
Peak Forward Voltage  
Reverse Recovery  
Time  
IRM  
VFM  
-
-
-
-
10  
0.98  
µA  
V
trr  
IFM= 1 A, -di/dt= 50 A/µs, Ta= 25°C  
Without Fin,PCB  
-
-
30  
ns  
140  
110  
1
2
Thermal Resistance  
Rth(j-a) Junction to Ambient  
-
-
°C/W  
P.C.Board Mounted  
1 Without Fin or P.C.Board  
2 P.C. Board Mounted(L=3mm, Print Lands = 5x5 mm,Both Sides)  

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