Datasheet > 10EDB60

10EDB60

更新时间： 2022-01-13 01:06:47

品牌	Logo	应用领域
NIEC		二极管
页数	文件大小	规格书
5页	38K
描述
DIODE - 1A 600V TJ =150C

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数据手册

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10EDB60 数据手册

ｓ

DIODE Type : 10EDB60

OUTLINE DRAWING

1A 600V Tj =150 °C

FEATURES

* Miniature Size

* Low Forward Voltage drop

* Low Reverse Leakage Current

* High Surge Capability

* 26mm and 52mm Inside Tape Spacing Package

Available

Maximum Ratings

Approx Net Weight:0.17g

Symbol

V_RRM

10EDB60

600

Unit

Rating

Repetitive Peak Reverse Voltage

50Hz

Half Sine Wave

Resistive Load

Ta=39°C *1

1.0

Average Rectified Output Current

I_O

Ta=26°C *2

0.9

RMS Forward Current

Surge Forward Current

I_F(RMS)

1.57

50Hz Half Sine Wave,1cycle,

Non-repetitive

I_FSM

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

1.0

110

140

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 1.0A

Junction to P.C. Board mounted*1

µA

Thermal Resistance

Rth(j-a)

°C/W

Ambient

Without Fin *2

*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)

*2: Without Fin or P.C. Board mounted

12 3 4 5

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