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NP34N055HHE

更新时间: 2024-01-10 22:37:36
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 70K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP34N055HHE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.25
配置:Single最大漏极电流 (Abs) (ID):34 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):88 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

NP34N055HHE 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP34N055HHE, NP34N055IHE  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
DESCRIPTION  
These products are N-Channel MOS Field Effect Tran-  
sistors designed for high current switching applications.  
PACKAGE  
TO-251  
NP34N055HHE  
NP34N055IHE  
TO-252  
FEATURES  
Channel temperature 175 degree rated  
Super low on-state resistance  
RDS(on) = 19 mMAX. (VGS = 10 V, ID = 17 A)  
Low Ciss : Ciss = 1600 pF TYP.  
Built-in gate protection diode  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
55  
±20  
±34  
±136  
1.2  
V
V
Gate to Source Voltage  
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
Total Power Dissipation (TA = 25 °C)  
Total Power Dissipation (TC = 25 °C)  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
Channel Temperature  
A
W
W
(TO-252)  
PT  
88  
IAS  
34 / 27 / 10  
11 / 72 / 100 mJ  
175 °C  
–55 to + 175 °C  
A
EAS  
Tch  
Storage Temperature  
Tstg  
Notes 1. PW 10 µ s, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V (see Figure 4.)  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
1.70  
125  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D14153EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
1999,2000  
©

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