Datasheet > MC-428LFH641FH-A60

MC-428LFH641FH-A60

更新时间： 2024-02-26 21:31:27

品牌	Logo	应用领域
日电电子 - NEC		动态存储器内存集成电路
页数	文件大小	规格书
32页	287K
描述
EDO DRAM Module, 8MX64, 60ns, MOS, DIM-168

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技术参数
数据手册

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MC-428LFH641FH-A60 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Base Number Matches：	1

MC-428LFH641FH-A60 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-428LFH641

3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE

UNBUFFERED TYPE, EDO

Description

The MC-428LFH641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :

PD4264805 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• Unbuffered type

• EDO (Hyper page mode)

• 8,388,608 words by 64 bits organization

• Fast access and cycle time

Family

Access time

(MAX.)

50 ns

R/W cycle time EDO (Hyper page mode)

Power consumption (MAX.)

(MIN.)

84 ns

cycle time (MIN.)

20 ns

Active

3.02 W

2.74 W

Standby

14.4 mW

MC-428LFH641-A50

MC-428LFH641-A60

60 ns

104 ns

25 ns

(CMOS level input)

• Refresh cycle

Family

Refresh cycle

Refresh

MC-428LFH641-A50

MC-428LFH641-A60

4,096 cycles / 64 ms

8,192 cycles / 64 ms

/RAS only refresh, Normal read / write

/CAS before /RAS refresh, Hidden refresh

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Single +3.3 V ± 0.3 V power supply

• Serial PD

The information in this document is subject to change without notice.

Document No. M11910EJ3V0DS00 (3rd edition)

Date Published October 1997 NS

Printed in Japan

The mark shows major revised points.

1996

12 3 4 5 6 7...32

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