DATA SHEET
MOS INTEGRATED CIRCUIT
MC-424LFG641
3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE
UNBUFFERED TYPE, EDO
Description
The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which
µ
µ
16 pieces of 16M DRAM ( PD4216405L), and 4 pieces of 64M DRAM ( PD4265165) are assembled, respectively.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• Unbuffered type
• EDO (Hyper page mode)
• 4,194,304 words by 64 bits organization
• Fast access and cycle time
Family
Access time
(MAX.)
60 ns
R/W cycle time EDO (Hyper page mode)
Power consumption (MAX.)
(MIN.)
104 ns
124 ns
104 ns
124 ns
84 ns
cycle time (MIN.)
25 ns
Active
4.61 W
4.03 W
4.61 W
4.03 W
2.16 W
1.88 W
Standby
28.8 mW
MC-424LFG641F-A60
MC-424LFG641F-A70
MC-424LFG641FA-A60
MC-424LFG641FA-A70
MC-424LFG641FW-A50
MC-424LFG641FW-A60
70 ns
30 ns
(CMOS level input)
60 ns
25 ns
70 ns
30 ns
50 ns
20 ns
7.2 mW
60 ns
104 ns
25 ns
(CMOS level input)
• Refresh cycle
Family
Refresh cycle
4,096 cycles / 64 ms
Refresh
MC-424LFG641-A50
MC-424LFG641-A60
MC-424LFG641-A70
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,
Hidden refresh
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Single +3.3 V ± 0.3 V power supply
• Serial PD
The information in this document is subject to change without notice.
Document No. M11687EJ7V0DS00 (7th edition)
Date Published October 1997 NS
Printed in Japan
The mark shows major revised points.
1996
©