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MC-424LFG641FA-A70 PDF预览

MC-424LFG641FA-A70

更新时间: 2024-01-05 19:52:50
品牌 Logo 应用领域
日电电子 - NEC 动态存储器内存集成电路
页数 文件大小 规格书
44页 394K
描述
EDO DRAM Module, 4MX64, 70ns, MOS, DIM-168

MC-424LFG641FA-A70 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84

MC-424LFG641FA-A70 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-424LFG641  
3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE  
UNBUFFERED TYPE, EDO  
Description  
The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which  
µ
µ
16 pieces of 16M DRAM ( PD4216405L), and 4 pieces of 64M DRAM ( PD4265165) are assembled, respectively.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• Unbuffered type  
• EDO (Hyper page mode)  
• 4,194,304 words by 64 bits organization  
• Fast access and cycle time  
Family  
Access time  
(MAX.)  
60 ns  
R/W cycle time EDO (Hyper page mode)  
Power consumption (MAX.)  
(MIN.)  
104 ns  
124 ns  
104 ns  
124 ns  
84 ns  
cycle time (MIN.)  
25 ns  
Active  
4.61 W  
4.03 W  
4.61 W  
4.03 W  
2.16 W  
1.88 W  
Standby  
28.8 mW  
MC-424LFG641F-A60  
MC-424LFG641F-A70  
MC-424LFG641FA-A60  
MC-424LFG641FA-A70  
MC-424LFG641FW-A50  
MC-424LFG641FW-A60  
70 ns  
30 ns  
(CMOS level input)  
60 ns  
25 ns  
70 ns  
30 ns  
50 ns  
20 ns  
7.2 mW  
60 ns  
104 ns  
25 ns  
(CMOS level input)  
• Refresh cycle  
Family  
Refresh cycle  
4,096 cycles / 64 ms  
Refresh  
MC-424LFG641-A50  
MC-424LFG641-A60  
MC-424LFG641-A70  
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,  
Hidden refresh  
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
• Single +3.3 V ± 0.3 V power supply  
• Serial PD  
The information in this document is subject to change without notice.  
Document No. M11687EJ7V0DS00 (7th edition)  
Date Published October 1997 NS  
Printed in Japan  
The mark shows major revised points.  
1996  
©

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