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AC03EGML

更新时间: 2024-01-31 05:29:45
品牌 Logo 应用领域
日电电子 - NEC 触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 180K
描述
TRIAC, 500V V(DRM), 3A I(T)RMS, PLASTIC PACKAGE-3

AC03EGML 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.55Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:3 A
断态重复峰值电压:600 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

AC03EGML 数据手册

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DATA SHEET  
THYRISTORS  
AC03DGM, AC03FGM  
3 A MOLD TRIAC  
PACKAGE DRAWING (UNIT: mm)  
The AC03EGM and AC03FGM are fully diffused mold TRIACs  
with an effective on-current of 3 A. The repeat peak off-voltages  
are 400 V and 600 V.  
FEATURES  
Gate trigger current (mode I, III, and IV) at 12 mA or less is  
guaranteed.  
This transistor features a small and lightweight package and is  
easy to handle even on the mounting surface due to its TO-  
202AA dimensions. Processing of lead wires and heatsink  
(tablet) using jigs is also possible.  
High degrees-of-freedom applications design is available due to  
high gate trigger sensitivity and small hold current distribution.  
Employs flame-retardant epoxy resin (UL94V-0).  
APPLICATIONS  
Noncontact switches of motor speed control, heater  
temperature control, lamp light control  
*TC  
test bench-mark  
Standard weight: 1.4 g  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VDSM  
AC03DGM  
500  
AC03FGM  
700  
Unit  
V
Remarks  
Non-repetitive peak off-state voltage  
Repetitive peak off-voltage  
Effective on-state current  
VDRM  
400  
600  
V
IT(RMS)  
3 (TC = 92°C)  
A
Refer to Figures  
11 and 12.  
Surge on-state current  
ITSM  
30 (50 Hz 1 cycle)  
33 (60 Hz 1 cycle)  
4.0 (1 ms t 10 ms)  
40  
A
Refer to Figure 2.  
Fusing current  
ƒiT2dt  
A2S  
Critical rate of rise of on-state  
current  
dIT/dt  
A/µs  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate current  
PGM  
PG(AV)  
IGM  
3 (f 50 Hz, Duty 10 %)  
0.3  
W
W
A
0.5 (f 50 Hz, Duty 10 %)  
40 to +125  
Junction temperature  
Tj  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13536EJ3V0DS00 (3rd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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