生命周期: | Transferred | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.36 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 180 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ449-AZ | NEC | Power Field-Effect Transistor, 6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
|
2SJ450 | HITACHI | Silicon P-Channel MOS FET |
获取价格 |
|
2SJ450UY | HITACHI | Power Field-Effect Transistor, 1A I(D), 60V, 1.9ohm, 1-Element, P-Channel, Silicon, Metal- |
获取价格 |
|
2SJ450UYTL | HITACHI | 1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET |
获取价格 |
|
2SJ450UYTR | HITACHI | 1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET |
获取价格 |
|
2SJ450UYUL | HITACHI | 暂无描述 |
获取价格 |