5秒后页面跳转
2SJ449 PDF预览

2SJ449

更新时间: 2024-01-24 03:53:03
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 121K
描述
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

2SJ449 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.36
其他特性:AVALANCHE RATED雪崩能效等级(Eas):180 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ449 数据手册

 浏览型号2SJ449的Datasheet PDF文件第2页浏览型号2SJ449的Datasheet PDF文件第3页浏览型号2SJ449的Datasheet PDF文件第4页浏览型号2SJ449的Datasheet PDF文件第5页浏览型号2SJ449的Datasheet PDF文件第6页浏览型号2SJ449的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ449  
SWITCHING  
P-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SJ449 is P-Channel MOS Field Effect Transistor de-  
signed for high voltage switching applications.  
PACKAGE DIMENSIONS  
(in millimeters)  
4.5 0.2  
10.0 0.ꢀ  
FEATURES  
ꢀ.2 0.2  
2.7 0.2  
Low On-Resistance  
RDS(on) = 0.8 MAX. (@ VGS = –10 V, ID = –3.0 A)  
Low Ciss  
Ciss = 1040 pF TYP.  
High Avalanche Capability Ratings  
Isolated TO-220 Package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
–250  
V
V
±
VGSS  
30  
±
ID(DC)  
ID(pulse)  
6.0  
A
±
2.5 0.1  
0.7 0.1  
2.54  
1.ꢀ 0.2  
Drain Current (pulse)*  
24  
A
1.5 0.2 0.65 0.1  
2.54  
Total Power Dissipation (Tc = 25 ˚C) PT1  
Total Power Dissipation (TA = 25 ˚C) PT2  
35  
2.0  
150  
W
W
˚C  
1. Gate  
2. Drain  
ꢀ. Source  
Channel Temperature  
Tch  
Tstg  
IAS  
Storage Temperature  
–55 to +150 ˚C  
Single Avalanche Current**  
Single Avalanche Energy**  
–6.0  
180  
A
1
2 ꢀ  
EAS  
mJ  
*
PW 10 µs, Duty Cycle 1 %  
MP-45F(ISOLATED TO-220)  
** Starting Tch = 25 ˚C, RG = 25 , VGS = –20 V 0  
Drain  
Body  
Diode  
Gate  
Source  
Document No. D10030EJ1V0DS00  
Date Published May 1995 P  
Printed in Japan  
1995  
©

与2SJ449相关器件

型号 品牌 描述 获取价格 数据表
2SJ449-AZ NEC Power Field-Effect Transistor, 6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal

获取价格

2SJ450 HITACHI Silicon P-Channel MOS FET

获取价格

2SJ450UY HITACHI Power Field-Effect Transistor, 1A I(D), 60V, 1.9ohm, 1-Element, P-Channel, Silicon, Metal-

获取价格

2SJ450UYTL HITACHI 1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET

获取价格

2SJ450UYTR HITACHI 1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET

获取价格

2SJ450UYUL HITACHI 暂无描述

获取价格