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2SJ356-AZ PDF预览

2SJ356-AZ

更新时间: 2024-02-27 22:47:50
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
6页 70K
描述
Power Field-Effect Transistor, 2A I(D), 60V, 0.95ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ356-AZ 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.32其他特性:ESD PROTECTED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):2 A
最大漏源导通电阻:0.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ356-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ356  
P-CHANNEL MOS FET  
FOR HIGH-SPEED SWITCHING  
The 2SJ356 is a P-channel MOS FET of a vertical type and is  
PACKAGE DIMENSIONS (in mm)  
a switching element that can be directly driven by the output of an  
IC operating at 5 V.  
4.5 ±0.1  
1.6 ±0.2  
D
This product has a low ON resistance and superb switching  
characteristics and is ideal for driving the actuators and DC/DC  
converters.  
1.5 ±0.1  
S
G
FEATURES  
0.42  
0.42  
±0.06  
±0.06  
0.47  
Can be directly driven by 5-V IC  
1.5  
+0.03  
±0.06  
0.41  
–0.05  
Low ON resistance  
3.0  
RDS(on) = 0.95 MAX. @VGS = –4 V, ID = –1.0 A  
RDS(on) = 0.50 MAX. @VGS = –10 V, ID = –1.0 A  
EQUIVALENT CIRCUIT  
Drain (D)  
Internal  
diode  
PIN CONNECTIONS  
S: Source  
Gate (G)  
D: Drain  
G: Gate  
Gate  
protection  
diode  
Source (S)  
Marking: PR  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
SYMBOL  
VDSS  
TEST CONDITIONS  
RATING  
–60  
UNIT  
VGS = 0  
VDS = 0  
V
V
A
A
VGSS  
–20/+10  
±2.0  
ID(DC)  
Drain Current (Pulse)  
ID(pulse)  
PW 10 ms  
±4.0  
Duty cycle 1 %  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
16 cm2 × 0.7 mm, ceramic substrate used  
2.0  
W
Tch  
Tstg  
150  
˚C  
–55 to +150  
˚C  
The internal diode connected between the gate and source of this product is to protect the product from static  
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect  
a protection circuit.  
Take adequate preventive measures against static electricity when handling this product.  
The information in this document is subject to change without notice.  
Document No. D11218EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  

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