是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.2 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 16 V | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 23 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ203-T1B | NEC | Small Signal Field-Effect Transistor, 0.2A I(D), 16V, 1-Element, P-Channel, Silicon, Metal |
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2SJ203-T2B | RENESAS | 2SJ203-T2B |
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2SJ203-T2B-AT | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,16V V(BR)DSS,200MA I(D),SOT-346 |
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2SJ204 | NEC | P-CHANNEL MOS FET FOR SWITCHING |
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2SJ204 | KEXIN | MOS Fied Effect Transistor |
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2SJ204-T1B | NEC | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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