是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.52 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 160 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 45 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1222L-AY | RENESAS | TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR |
获取价格 |
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2SA1222-L-AZ | NEC | Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon |
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2SA1222L-T-AY | RENESAS | TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR |
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|
2SA1222M | NEC | BJT |
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|
2SA1222M-T | RENESAS | 2SA1222M-T |
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2SA1222M-T-AY | RENESAS | TRANSISTOR,BJT,PNP,160V V(BR)CEO,500MA I(C),SPAKVAR |
获取价格 |