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2SA1222-L PDF预览

2SA1222-L

更新时间: 2024-01-20 01:47:12
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
4页 85K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon

2SA1222-L 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.52最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):45 MHzBase Number Matches:1

2SA1222-L 数据手册

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DATA SHEET  
SILICON TRANSISTORS  
2SA1221, 1222  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
Ideal for use of high withstanding voltage current such as TV  
vertical deflection output, audio output, and variable power  
supplies.  
Complementary transistor with 2SC2958 and 2SC2959  
VCEO = 140 V: 2SA1221/2SC2958  
VCEO = 160 V: 2SA1222/2SC2959  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)*  
PT  
Ratings  
160  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
140/–160  
5.0  
V
V
500  
mA  
A
1.0  
1.0  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 100 V, IE = 0  
VEB = 5.0 V, IC = 0  
MIN.  
TYP.  
MAX.  
200  
200  
400  
Unit  
nA  
IEBO  
nA  
VCE = 2.0 V, IC = 100 mA  
VCE = 5.0 V, IC = 20 mA  
IC = 1.0 A, IB = 0.2 A  
hFE **  
VBE **  
VCE(sat) **  
VBE(sat) **  
Cob  
100  
150  
0.64  
0.6  
1.1  
24  
0.6  
0.7  
0.9  
0.3  
40  
DC base voltage  
V
V
Collector saturation voltage  
Base saturation voltage  
Output capacitance  
Gain bandwidth product  
IC = 1.0 A, IB = 0.2 A  
V
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 10 V, IE = 20 mA  
pF  
MHz  
fT  
30  
45  
** Pulse test PW 350 µs, duty cycle 2% per pulsed  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16143EJ1V0DS00  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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