2SA1129L

更新时间： 2024-01-03 03:18:41

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	104K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 7A I(C) \| TO-220AB

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技术参数
数据手册

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2SA1129L 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.23
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	7 A
集电极-发射极最大电压：	30 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SA1129L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1129

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

ORDERING INFORMATION

The 2SA1129 is a mold power transistor developed for mid-speed

switching, and is ideal for use as a ramp driver.

Part No.

Package

2SA1129

TO-220AB

FEATURES

• Large current capacity with small package: I^C(DC)= −7.0 A

• Low collector saturation voltage:

(TO-220AB)

V^CE(sat)= −0.3 V MAX. @I^C= −3.0 A, IB = −0.1 A

• Complementary transistor: 2SC2654

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

−30

−7.0

−15

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

V^EBO

I^C(DC)

PW ≤ 300 µs,

I^C(pulse)

duty cycle ≤ 10%

−3.5

Base current (DC)

I^B(DC)

P^T

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

1.5

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14856EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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与2SA1129L相关器件

型号	品牌	描述	获取价格	数据表
2SA1129-L	RENESAS	Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti	获取价格
2SA1129-L-AZ	NEC	Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti	获取价格
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2SA1129M	NEC	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 7A I(C) \| TO-220AB	获取价格
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2SA1129-M-AZ	RENESAS	7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN	获取价格