Datasheet > 2SA1010-L

2SA1010-L

更新时间： 2024-02-16 20:51:08

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网开关晶体管
页数	文件大小	规格书
6页	118K
描述
Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN

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2SA1010-L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1010

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1010 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use as a driver in

devices such as switching regulators, DC/DC converters, and high-

frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2334

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

−100

−7.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CBO

V^CEO

Pin Connection

V^EBO

I^C(DC)

−7.0

−15

I^C(pulse)*

−3.5

I^B(DC)

P^T(Tc = 25 °C)

P^T(Ta = 25 °C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.5

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16118EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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2SA1010-L-AZ	NEC	暂无描述	获取价格
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2SA1010-M	RENESAS	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
2SA1011	JMNIC	Silicon PNP Power Transistors	获取价格
2SA1011	MOSPEC	POWER TRANSISTORS(1.5A,160V,25W)	获取价格
2SA1011	Wing Shing	PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)	获取价格