是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.17 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1009A-M-AZ | RENESAS | 2A, 400V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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2SA1009A-M-AZ | NEC | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
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2SA1009-AZ | RENESAS | 2SA1009-AZ |
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2SA1009H | NEC | TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB |
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2SA1009-H | NEC | Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
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2SA1009-H-AZ | RENESAS | 2A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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