2SA1008-L-AZ

更新时间： 2024-01-30 02:53:01

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2SA1008-L-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1008

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

ORDERING INFORMATION

The 2SA1008 is a mold power transistor developed for high-speed

switching, and is ideal for use as a driver in devices such as switching

regulators, DC/DC converters, and high-frequency power amplifiers.

Part No.

2SA1008

Package

TO-220AB

FEATURES

(TO-220AB)

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2331

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

−100

−7.0

−2.0

−4.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

V^EBO

I^C(DC)

PW ≤ 300 µs,

I^C(pulse)

duty cycle ≤ 10%

−1.0

Base current (DC)

I^B(DC)

P^T

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

1.5

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14866EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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2SA1008-M-AZ	NEC	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
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2SA1009A	NEC	PNP SILICON POWER TRANSISTORS	获取价格
2SA1009AH	NEC	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 2A I(C) \| TO-220AB	获取价格