Datasheet > 2SA1008-AZ

2SA1008-AZ

更新时间： 2024-02-12 22:33:11

品牌	Logo	应用领域
日电电子 - NEC		局域网开关晶体管
页数	文件大小	规格书
6页	109K
描述
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN

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技术参数
数据手册

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2SA1008-AZ 技术参数

生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.35
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	100 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SA1008-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1008

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

ORDERING INFORMATION

The 2SA1008 is a mold power transistor developed for high-speed

switching, and is ideal for use as a driver in devices such as switching

regulators, DC/DC converters, and high-frequency power amplifiers.

Part No.

2SA1008

Package

TO-220AB

FEATURES

(TO-220AB)

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2331

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

−100

−7.0

−2.0

−4.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

V^EBO

I^C(DC)

PW ≤ 300 µs,

I^C(pulse)

duty cycle ≤ 10%

−1.0

Base current (DC)

I^B(DC)

P^T

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

1.5

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14866EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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2SA1008K	NEC	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-220AB	获取价格
2SA1008-K	NEC	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
2SA1008-K-AZ	NEC	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
2SA1008L	NEC	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-220AB	获取价格
2SA1008-L	RENESAS	2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN	获取价格
2SA1008-L-AZ	NEC	暂无描述	获取价格