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2S2M-CY PDF预览

2S2M-CY

更新时间: 2024-01-19 07:44:19
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2S2M-CY 数据手册

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DATA SHEET  
THYRISTORS  
2S2M, 2S4M  
2 A HIGH-SPEED SWITCHING SCR  
PACKAGE DRAWING (UNIT: mm)  
The 2S2M and 2S4M are P-gate fully diffused mold SCRs  
with an average on-current of 2 A. The repeat peak off-voltages  
(and reverse voltages) are 200 V and 400 V.  
FEATURES  
• This transistor is designed for high-speed switching and is  
deal for use in commercial frequencies, high-frequency pulse  
applications, and inverter applications.  
• This transistor features a small and lightweight package and  
is easy to handle even on the mounting surface due to its  
TO-202AA dimensions. Processing of lead wires and  
heatsink (tablet) using jigs is also possible.  
• Employs flame-retardant epoxy resin (UL94V-0).  
APPLICATIONS  
Consumer electronic euipments, ignitors of devices for light  
indutry, inverter, and solenoid valve drives  
Electrode connection  
<1>Cathode  
<2>Anode  
<3>Gate  
Standard weight: 1.4  
*TC test bench-mark  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Non-repetitive peak reverse voltage  
Non-repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Repetitive peak off-voltage  
Average on-state current  
Symbol  
VRSM  
VDSM  
VRRM  
VDRM  
IT(AV)  
ITSM  
2S2M  
300  
2S4M  
500  
Ratings  
Unit  
V
V
R
R
R
R
GK = 1 k  
GK = 1 k  
GK = 1 k  
GK = 1 k  
300  
500  
200  
400  
V
200  
400  
V
2 (Tc = 77°C, Single half-wave, θ = 180°)  
20 (f = 50 Hz, Sine half-wave, 1 cycle)  
A
Refer to Figure 6 snd 7.  
Surge on-state current  
A
Refer to Figure 2.  
High-frequency peak on-state current  
Fusing current  
ITRM  
15 (Tc = 65°C, f = 10 kp.p.s, tp = 10 µs)  
A
it2dt  
dIT/dt  
PGM  
1.6 (1 mst10 ms)  
A2s  
A/µs  
W
W
A
Critical rate of rise of on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward current  
Peak gate reverse voltage  
Junction temperature  
50  
0.5 (f50 Hz, Duty10%)  
PG(AV)  
IFGM  
0.1  
0.2 (f50 Hz, Duty10%)  
6
VRGM  
Tj  
V
40 to +125  
55 tp +150  
°C  
°C  
Storage temperature  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13535EJ2V0DS00 (2nf edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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