1SS304

更新时间： 2024-01-12 01:43:12

品牌	Logo	应用领域
日电电子 - NEC		整流二极管开关光电二极管
页数	文件大小	规格书
4页	57K
描述
SILICON SWITCHING DIODES

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1SS304 技术参数

生命周期：	Transferred	包装说明：	R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.6
配置：	COMMON CATHODE, 2 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PDSO-G3
元件数量：	2	端子数量：	3
最大输出电流：	0.1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大反向恢复时间：	0.003 µs	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1SS304 数据手册

DATA SHEET

SILICON SWITCHING DIODE

1SS304

HIGH SPEED SWITCHING

SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE

FEATURES

• Low capacitance: C^t= 1.1 pF TYP.

PACKAGE DIMENSIONS (Unit: mm)

• High speed switching: t^rr= 3.0 ns MAX.

2.1±0.1

• Wide applications including switching, limitter, clipper.

• Double diode configuration assures economical use.

1.25±0.1

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (T^A= 25°C)

Peak Reverse Voltage

V^RM

V^R

DC Reverse Voltage

Surge Current (1 µs) ^Note

Surge Current (1 µs)

Marking

I^FSM

I^FM

I^O

6.0

4.0

450

300

150

100

Peak Forward Current ^Note

Peak Forward Current

Average Rectified Current ^Note

Average Rectified Current

Maximum Temperatures

Junction Temperature

I^O

CONNECTION DIAGRAM (Top View)

T^j

150

°C

Storage Temperature Range

Thermal Resistance

Junction to Ambient ^Note

T^stg

–55 to + 150

1. Anode

2. Anode

3. Cathode

R^th(j-a)

1.0

°C/mW

Junction to Ambient

0.85

Note Both diodes loaded simultaneously.

Marking : A6

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Forward Voltage

V^F1

V^F2

V^F3

I^R

I^F= 10 mA

0.67

0.75

0.85

1.0

1.1

1.2

0.1

4.0

3.0

I^F= 50 mA

I^F= 100 mA

Reverse Current

Capacitance

V^R= 50 V

µA

C^t

V^R= 0 V, f = 1.0 MHz

See Test Circuit.

1.1

Reverse Recovery Time

t^rr

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16309EJ2V0DS00 (2nd edition)

1987

(Previous No. DC-2101)

Date Published July 2002 NS CP(K)

Printed in Japan

12 3 4

下载PDF

与1SS304相关器件

型号	品牌	描述	获取价格	数据表
1SS304-A	RENESAS	0.1A, 2 ELEMENT, SILICON, SIGNAL DIODE	获取价格
1SS304-T1	RENESAS	0.1A, 2 ELEMENT, SILICON, SIGNAL DIODE, SUPER MINIMOLD, SC-70, 3 PIN	获取价格
1SS304-T2	RENESAS	Rectifier Diode, 2 Element, 0.1A, Silicon, SUPER MINIMOLD, SC-70, 3 PIN	获取价格
1SS304-T2-A	RENESAS	1SS304-T2-A	获取价格
1SS305	TYSEMI	Low capacitance: Ct = 4.0 pF MAX. Wide applications including switching, limitter, clipper	获取价格
1SS305	KEXIN	SILICON SWITCHING DIODE	获取价格