Datasheet > N02L163WN1AB1

N02L163WN1AB1

更新时间： 2022-12-14 19:46:31

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
11页	264K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N02L163WN1AB1 数据手册

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112

ph: 408-573-8878, FAX: 408-573-8877

www.nanoamp.com

N02L163WN1A

2Mb Ultra-Low Power Asynchronous CMOS SRAM

128K × 16bit

Overview

Features

The N02L163WN1A is an integrated memory

device containing a 2 Mbit Static Random Access

Memory organized as 131,072 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with a single chip

enable (CE) control and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently. The N02L163WN1A is

optimal for various applications where low-power is

critical such as battery backup and hand-held

devices. The device can operate over a very wide

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Single Chip Enable (CE)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

temperature range of -40 C to +85 C and is

available in JEDEC standard packages compatible

with other standard 128Kb x 16 SRAMs.

Vcc = 1.8V

• Very fast output enable access time

30ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Compact space saving BGA package avail-

able

Product Family

Standby

Power

Supply

(Vcc)

Operating

Current (Icc),

Typical

Operating

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Typical

N02L163WN1AB

N02L163WN1AT

N02L163WN1AB1

48 - BGA

44 - TSOP II

55ns @ 2.7V

70ns @ 2.3V

-40^oC to +85^oC

2.3V - 3.6V

2 µA

2 mA @ 1MHz

48 - BGA Pb-Free

N02L163WN1AT2 44 - TSOP II Green

(DOC# 14-02-014 REV L ECN# 01-1000)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...11

下载PDF

与N02L163WN1AB1相关器件

型号	品牌	描述	获取价格	数据表
N02L163WN1AB1-55I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AB1-70I	NANOAMP	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48	获取价格
N02L163WN1AB-55I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N02L163WN1AT2-55I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格