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N02L163WN1AB1-70I PDF预览

N02L163WN1AB1-70I

更新时间: 2024-02-04 10:13:47
品牌 Logo 应用领域
NANOAMP 静态存储器内存集成电路
页数 文件大小 规格书
11页 262K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48

N02L163WN1AB1-70I 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FBGA, BGA48,6X8,30Reach Compliance Code:unknown
风险等级:5.8最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified最大待机电流:0.00001 A
最小待机电流:1.8 V子类别:SRAMs
最大压摆率:0.016 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOMBase Number Matches:1

N02L163WN1AB1-70I 数据手册

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NanoAmp Solutions, Inc.  
1982 Zanker Road, San Jose, CA 95112  
ph: 408-573-8878, FAX: 408-573-8877  
www.nanoamp.com  
N02L163WN1A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128K × 16bit  
Overview  
Features  
The N02L163WN1A is an integrated memory  
device containing a 2 Mbit Static Random Access  
Memory organized as 131,072 words by 16 bits.  
The device is designed and fabricated using  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with a single chip  
enable (CE) control and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently. The N02L163WN1A is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 128Kb x 16 SRAMs.  
Vcc = 1.8V  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Typical  
N02L163WN1AB  
N02L163WN1AT  
N02L163WN1AB1  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Pb-Free  
N02L163WN1AT2 44 - TSOP II Green  
(DOC# 14-02-014 REV L ECN# 01-1000)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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