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N02L163WC2AB-70I

更新时间： 2024-02-27 19:35:51
品牌 Logo 应用领域
NANOAMP 静态存储器
页数 文件大小 规格书
10页 92K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48

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N02L163WC2AB-70I 技术参数

是否Rohs认证： 不符合生命周期：Contact Manufacturer
包装说明：FBGA, BGA48,6X8,30Reach Compliance Code：unknown
风险等级：5.88最长访问时间：70 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
内存密度：2097152 bit内存集成电路类型：STANDARD SRAM
内存宽度：16端子数量：48
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：2.5/3.3 V
认证状态：Not Qualified最小待机电流：1.8 V
子类别：SRAMs最大压摆率：0.016 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
Base Number Matches：1

N02L163WC2AB-70I 数据手册

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NanoAmp Solutions, Inc.  
1982 Zanker Road, San Jose, CA 95112  
ph: 408-573-8878, FAX: 408-573-8877  
www.nanoamp.com  
N02L163WC2A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128Kx16 bit  
Overview  
Features  
The N02L163WC2A is an integrated memory  
device containing a 2 Mbit Static Random Access  
Memory organized as 131,072 words by 16 bits.  
The device is designed and fabricated using  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The base design is the same as  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
NanoAmp’s N02L1618N1A, which is processed to  
operate at lower voltages. The device operates  
with two chip enable (CE1 and CE2) controls and  
output enable (OE) to allow for easy memory  
expansion. Byte controls (UB and LB) allow the  
upper and lower bytes to be accessed  
independently and can also be used to deselect  
the device. The N02L163WC2A is optimal for  
various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
• Very fast output enable access time  
30ns OE access time  
temperature range of -40oC to +85oC and is  
available in JEDEC standard packages compatible  
with other standard 128Kb x 16 SRAMs  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Operating  
Current (Icc),  
Max  
Package  
Type  
Operating  
Temperature  
Power  
Supply (Vcc)  
Current (I ),  
Part Number  
Speed  
SB  
Max  
N02L163WC2AB  
48 - BGA  
55ns @ 2.7V  
70ns @ 2.3V  
o
o
2.3V - 3.6V  
20 µA  
4 mA @ 1MHz  
-40 C to +85 C  
N02L163WC2AT 44 - TSOP II  
Pin Configuration  
Pin Descriptions  
1
LB  
I/O  
2
3
4
5
6
A
A
A
A
A
4
3
2
1
0
1
2
3
4
5
6
7
8
PIN  
ONE  
A
A
A
OE  
UB  
5
6
7
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
Pin Name  
A -A  
Pin Function  
A
A
A
OE  
CE2  
A
B
C
D
E
F
0
1
2
Address Inputs  
Write Enable Input  
0
16  
A
A
A
A
A
I/O  
0
UB  
CE1  
8
3
5
4
6
7
CE1  
LB  
WE  
CE1, CE2  
OE  
I/O  
I/O  
I/O  
I/O  
VCC  
VSS  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VCC  
I/O11  
I/O10  
I/O  
V
I/O  
I/O  
1
I/O  
2
9
10  
11  
12  
13  
Chip Enable Input  
9
I/O  
I/O  
I/O  
I/O  
3
V
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
NC  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
SS  
CC  
CC  
LB  
V
A
A
A
A
I/O  
4
V
16  
15  
13  
10  
SS  
4
5
6
7
UB  
I/O  
A
I/O  
5
I/O  
6
14  
15  
14  
I/O  
I/O  
CE2  
9
I/O -I/O  
8
0
15  
I/O  
A
I/O  
7
WE  
NC  
WE  
G
H
12  
V
A
A
A
A
A
16  
15  
14  
13  
12  
Power  
Ground  
A
A
A
A
8
CC  
SS  
9
A
A
9
A
NC  
NC  
8
11  
10  
11  
V
48 Pin BGA (top)  
6 x 8 mm  
NC  
NC  
Not Connected  
Stock No. 23140-04 1/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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