Datasheet > N02L1618C1AB2

N02L1618C1AB2

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
11页	263K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N02L1618C1AB2 数据手册

NanoAmp Solutions, Inc.

N02L1618C1A

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

Advance Information

2Mb Ultra-Low Power Asynchronous CMOS SRAM

128Kx16 bit

Overview

Features

The N02L1618C1A is an integrated memory

device containing a 2 Mbit Static Random Access

Memory organized as 131,072 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The base design is the same as

• Single Wide Power Supply Range

1.65 to 2.2 Volts

• Very low standby current

0.5µA at 1.8V (Typical)

• Very low operating current

1.4mA at 1.8V and 1µs (Typical)

NanoAmp’s N02L163WN1A, which is processed to

operate at higher voltages. The device operates

with a single chip enable (CE) control and output

enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB) allow the upper and

lower bytes to be accessed independently. The

N02L1618C1A is optimal for various applications

where low-power is critical such as battery backup

and hand-held devices. The device can operate

• Very low Page Mode operating current

0.5mA at 1.8V and 1µs (Typical)

• Simple memory control

Single Chip Enable (CE)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.2V

• Very fast output enable access time

over a very wide temperature range of -40 C to

30ns OE access time

+85 C and is available in JEDEC standard

• Automatic power down to standby mode

• TTL compatible three-state output driver

packages compatible with other standard 128Kb x

16 SRAMs.

• Compact space saving BGA package avail-

able

Product Family

Standby

Power

Supply

(Vcc)

Operating

Current (Icc),

Max

Operating

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Max

N02L1618C1AB

48 - BGA

N02L1618C1AB2 Green 48-BGA

N02L1618C1AT2 Green 44-TSOP2

70/85ns @

1.65V

-40^oC to +85^oC

1.65V - 2.2V

10 µA

3 mA @ 1MHz

N02L1618C1AT

44 - TSOP2

(DOC# 14-02-012 REV B ECN# 01-1274)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...11

下载PDF

与N02L1618C1AB2相关器件

型号	品牌	描述	获取价格	数据表
N02L1618C1AB2-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AB2-85I	AMI	Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48	获取价格
N02L1618C1AB-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格
N02L1618C1AT2-70I	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit	获取价格