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N02L083WC2AT2-70I PDF预览

N02L083WC2AT2-70I

更新时间: 2024-01-12 12:02:10
品牌 Logo 应用领域
NANOAMP 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 230K
描述
Standard SRAM, 256KX8, 70ns, CMOS, PDSO32

N02L083WC2AT2-70I 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:GREEN, TSOP1-32针数:32
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.016 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

N02L083WC2AT2-70I 数据手册

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NanoAmp Solutions, Inc.  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
N02L083WC2A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
256K × 8 bit  
Overview  
Features  
The N02L083WC2A is an integrated memory  
device containing a 2 Mbit Static Random Access  
Memory organized as 262,144 words by 8 bits. The  
device is designed and fabricated using  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. The  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
N02L083WC2A is optimal for various applications  
where low-power is critical such as battery backup  
and hand-held devices. The device can operate  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Output Enable (OE) for memory expansion  
o
over a very wide temperature range of -40 C to  
• Low voltage data retention  
o
+85 C and is available in JEDEC standard  
Vcc = 1.8V  
packages compatible with other standard 256Kb x  
8 SRAMs  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
Product Family  
Standby  
Operating  
Current (Icc),  
Typical  
Operating  
Power  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature Supply (Vcc)  
Typical  
N02L083WC2AT  
N02L083WC2AN  
32 - TSOP I  
32 - STSOP I  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
N02L083WC2AT2 32 - TSOP I Green  
N02L083WC2AN2 32 - STSOP I Green  
Pin Configuration  
Pin Descriptions  
Pin Name  
A0-A17  
WE  
CE1, CE2  
OE  
I/O0-I/O7  
VCC  
VSS  
Pin Function  
OE  
32  
A11  
A9  
1
A10  
31  
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Data Inputs/Outputs  
2
CE1  
30  
A8  
3
I/O7  
29  
A13  
WE  
CE2  
A15  
VCC  
4
I/O6  
28  
5
I/O5  
27  
6
I/O4  
26  
7
N02L083WC2A  
I/O3  
25  
8
VSS  
24  
9
STSOP-I, TSOP-I  
A17  
A16  
A14  
A12  
A7  
10  
11  
12  
13  
14  
15  
16  
23  
22  
21  
20  
19  
18  
17  
I/O2  
I/O1  
I/O0  
A0  
Power  
Ground  
A1  
A6  
A2  
A5  
A3  
A4  
(DOC# 14-02-015 REV F ECN# 01-1284)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
1

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