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N01L163WN1AB-55I PDF预览

N01L163WN1AB-55I

更新时间: 2024-02-26 09:07:46
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NANOAMP 内存集成电路静态存储器
页数 文件大小 规格书
10页 261K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

N01L163WN1AB-55I 数据手册

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NanoAmp Solutions, Inc.  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
N01L163WN1A  
1Mb Ultra-Low Power Asynchronous CMOS SRAM  
64K × 16 bit  
Features  
• Single Wide Power Supply Range  
Overview  
The N01L163WN1A is an integrated memory  
device containing a 1 Mbit Static Random Access  
Memory organized as 65,536 words by 16 bits. The  
device is designed and fabricated using  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with a single chip  
enable (CE) control and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently. The N01L163WN1A is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
• Very fast output enable access time  
o
o
30ns OE access time  
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 64Kb x 16 SRAMs.  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Typical  
N01L163WN1AB  
N01L163WN1AT  
N01L163WN1AB2  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Green  
N01L163WN1AT2 44 - TSOP II Green  
Pin Configurations  
Pin Descriptions  
1
2
3
A0  
A3  
4
A1  
A4  
A6  
A7  
NC  
5
A2  
6
A4  
1
PIN  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A3  
2
ONE  
A6  
A2  
3
LB  
OE  
NC  
A7  
A
B
C
D
E
F
A1  
4
OE  
Pin Name  
A0-A15  
Pin Function  
A0  
5
UB  
I/O8  
I/O0  
UB  
CE  
CE  
6
LB  
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
Not Connected  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A15  
A14  
A13  
A12  
NC  
7
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VCC  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
I/O9 I/O10 A5  
I/O1 I/O2  
I/O3 VCC  
I/O4 VSS  
8
WE  
CE  
OE  
LB  
UB  
9
VSS I/O11  
VCC I/O12  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
NC  
I/O14 I/O13 A14  
A15 I/O5 I/O6  
I/O15  
NC  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
A8  
I/O0-I/O15  
A9  
A10  
A11  
NC  
VCC  
VSS  
48 Pin BGA (top)  
6 x 8 mm  
NC  
Power  
Ground  
(DOC# 14-02-011 REV G ECN# 01-1272)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
1

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