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N01L163WC2AB1-55I PDF预览

N01L163WC2AB1-55I

更新时间: 2024-01-30 07:50:23
品牌 Logo 应用领域
NANOAMP 静态存储器
页数 文件大小 规格书
11页 265K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

N01L163WC2AB1-55I 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FBGA, BGA48,6X8,30Reach Compliance Code:unknown
风险等级:5.8最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified最大待机电流:0.00001 A
最小待机电流:1.8 V子类别:SRAMs
最大压摆率:0.014 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOMBase Number Matches:1

N01L163WC2AB1-55I 数据手册

 浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第2页浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第3页浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第4页浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第5页浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第6页浏览型号N01L163WC2AB1-55I的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
1982 Zanker Road, San Jose, CA 95112  
ph: 408-573-8878, FAX: 408-573-8877  
www.nanoamp.com  
N01L163WC2A  
1Mb Ultra-Low Power Asynchronous CMOS SRAM  
64K × 16 bit  
Overview  
Features  
The N01L163WC2A is an integrated memory  
device containing a 1 Mbit Static Random Access  
Memory organized as 65,536 words by 16 bits. The  
device is designed and fabricated using  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently and can also be used to  
deselect the device. The N01L163WC2A is optimal  
for various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 64Kb x 16 SRAMs  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Current  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Part Number  
Package Type  
Speed  
Temperature  
(ISB), Typical  
N01L163WC2AB  
N01L163WC2AT  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
N01L163WC2AB1 48 - BGA Pb-Free  
N01L163WC2AT2 44 - TSOP II Green  
(DOC# 14-02-010 REV F ECN# 01-0996)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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