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MW4IC2230GMBR1 PDF预览

MW4IC2230GMBR1

更新时间： 2024-01-30 19:07:41
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
12页 660K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MW4IC2230GMBR1 技术参数

生命周期：Transferred包装说明：FLNG,.8''H SPACE
Reach Compliance Code：unknown风险等级：5.15
特性阻抗：50 Ω构造：COMPONENT
增益：29 dB最大输入功率 (CW)：20 dBm
功能数量：1最大工作频率：2170 MHz
最小工作频率：2110 MHz封装主体材料：PLASTIC/EPOXY
封装等效代码：FLNG,.8''H SPACE电源：28 V
射频/微波设备类型：NARROW BAND HIGH POWER子类别：RF/Microwave Amplifiers
最大电压驻波比：3Base Number Matches：1

MW4IC2230GMBR1 数据手册

 浏览型号MW4IC2230GMBR1的Datasheet PDF文件第2页浏览型号MW4IC2230GMBR1的Datasheet PDF文件第3页浏览型号MW4IC2230GMBR1的Datasheet PDF文件第4页浏览型号MW4IC2230GMBR1的Datasheet PDF文件第5页浏览型号MW4IC2230GMBR1的Datasheet PDF文件第6页浏览型号MW4IC2230GMBR1的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MW4IC2230/D  
The Wideband IC Line  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MW4IC2230MBR1  
MW4IC2230GMBR1  
The MW4IC2230 wideband integrated circuit is designed for W-CDMA base  
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)  
LDMOS IC technology and integrates a multi-stage structure. Its wideband  
On-Chip design makes it usable from 1600 to 2400 MHz. The linearity  
performances cover all modulations for cellular applications: GSM, GSM  
EDGE, TDMA, CDMA and W-CDMA.  
2110-2170 MHz, 30 W, 28 V  
SINGLE W-CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
Final Application  
Typical Single-carrier W-CDMA Performance: VDD = 28 Volts, IDQ1  
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel  
=
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on  
CCDF.  
Power Gain — 31 dB  
Drain Efficiency — 15%  
ACPR @ 5 MHz = -45 dBc @ 3.84 MHz Bandwidth  
Driver Application  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
Typical Single-carrier W-CDMA Performance: VDD = 28 Volts, IDQ1  
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel  
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 31.5 dB  
=
MW4IC2230MBR1  
ACPR @ 5 MHz = -53.5 dBc @ 3.84 MHz Bandwidth  
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW  
Output Power  
CASE 1329A-03  
TO-272 WB-16 GULL  
PLASTIC  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)  
• Integrated Temperature Compensation with Enable/Disable Function  
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)  
• Integrated ESD Protection  
MW4IC2230GMBR1  
• Also Available in Gull Wing for Surface Mount  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel  
PIN CONNECTIONS  
V
V
RD1  
RG1  
1
2
3
4
5
GND  
16  
15  
GND  
V
V
V
DS2  
RD1  
RG1  
V
V
DS2  
DS1  
3 Stages I  
V
C
DS1  
V
RF  
DS3/  
RF  
in  
6
14  
out  
RF  
V
/RF  
DS3 out  
in  
7
8
9
10  
V
V
V
GS1  
GS2  
GS3  
V
V
V
GS1  
GS2  
GS3  
13  
12  
Quiescent Current  
Temperature Compensation  
GND  
11  
GND  
(Top View)  
NOTE: Exposed backside flag is source  
terminal for transistors.  
Functional Block Diagram  
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1987.  
REV 2  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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