BD242CW

更新时间： 2024-01-20 08:27:18

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摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管局域网
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数据手册

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BD242CW 数据手册

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by BD241B/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

•

Collector–Emitter Saturation Voltage —

= 1.2 Vdc (Max) @ I = 3.0 Adc

Collector–Emitter Sustaining Voltage —

•

= 80 Vdc (Min.) BD241B, BD242B

= 100 Vdc (Min.) BD241C, BD242C

CEO(sus)

*Motorola Preferred Device

•

High Current Gain — Bandwidth Product

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

= 3.0 MHz (Min) @ I = 500 mAdc

Compact TO–220 AB Package

MAXIMUM RATINGS

80, 100 VOLTS

40 WATTS

BD241B

BD242B

BD241C

BD242C

Rating

Collector–Emitter Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CEO

100

115

CES

5.0

Collector Current — Continuous

Peak

3.0

5.0

Adc

Base Current

1.0

Adc

Total Device Dissipation @ T = 25 C

Derate above 25 C

0.32

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

3.125

θJC

100

120

140

160

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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