2N7000

更新时间： 2024-02-10 21:53:58

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管开关
页数	文件大小	规格书
4页	81K
描述
CASE 29-04, STYLE 22 TO-92 (TO-226AA)

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技术参数
数据手册

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2N7000 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-W3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.82
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.3 A
最大漏源导通电阻：	5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-W3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

2N7000 数据手册

Order this document

by 2N7000/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel — Enhancement

Motorola Preferred Device

3 DRAIN

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Drain Source Voltage

Symbol

Value

Unit

Vdc

DSS

CASE 29–04, STYLE 22

TO–92 (TO–226AA)

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–Source Voltage

— Continuous

±20

±40

Vdc

Vpk

— Non–repetitive (t ≤ 50 µs)

GSM

Drain Current

Continuous

Pulsed

mAdc

200

500

Total Power Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Operating and Storage Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

300

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient

θJA

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

—

Vdc

(BR)DSS

= 0, I = 10 µAdc)

Zero Gate Voltage Drain Current

DSS

= 48 Vdc, V

= 0)

—

1.0

µAdc

mAdc

= 0, T = 125°C)

Gate–Body Leakage Current, Forward

(V = 15 Vdc, V = 0)

—

–10

nAdc

GSSF

GSF

(1)

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

3.0

Vdc

GS(th)

= V , I = 1.0 mAdc)

Static Drain–Source On–Resistance

Ohm

DS(on)

= 10 Vdc, I = 0.5 Adc)

—

5.0

6.0

= 4.5 Vdc, I = 75 mAdc)

Drain–Source On–Voltage

Vdc

DS(on)

= 10 Vdc, I = 0.5 Adc)

—

2.5

0.45

= 4.5 Vdc, I = 75 mAdc)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4

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