1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are
PIN CONFIGURATION (TOP VIEW)
a
1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS
technology. The use of resistive load NMOS cells and CMOS
periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy
to design a printed circuit board.
1
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
VCC
A15
S2
ADDRESS
INPUT
CHIP SELECT
INPUT
WRITE CONTROL
INPUT
3
4
W
5
A13
A8
6
A6
ADDRESS
INPUTS
ADDRESS
INPUTS
7
A5
A9
8
A4
A11
OE
A10
OUTPUT ENABLE
INPUT
9
A3
ADDRESS
10
11
12
13
A2
INPUT
CHIP SELECT
INPUT
A1
S1
A0
DQ8
DQ7
DQ6
DQ5
DQ4
FEATURES
DQ1
Power supply current
Access
DATA
INPUTS/
OUTPUTS
DATA
INPUTS/
OUTPUTS
DQ2 14
Active
(1MHz)
(max)
time
Type name
VCC
stand-by
(max)
15
(max)
DQ3
16
GND
M5M51008BFP,VP,RV,KV,KR-70VL
M5M51008BFP,VP,RV,KV,KR-10VL
M5M51008BFP,VP,RV,KV,KR-12VL
M5M51008BFP,VP,RV,KV,KR-15VL
M5M51008BFP,VP,RV,KV,KR-70VLL
70ns
100ns
120ns
150ns
70ns
3.3±0.3V
3.0±0.3V
3.3±0.3V
3.0±0.3V
60µA
55µA
12µA
11µA
10mA
10mA
10mA
10mA
Outline 32P2M-A
1
32
A11
OE
2
31
A9
A10
M5M51008BFP,VP,RV,KV,KR-10VLL 100ns
M5M51008BFP,VP,RV,KV,KR-12VLL 120ns
M5M51008BFP,VP,RV,KV,KR-15VLL 150ns
3
30
S1
A8
4
29
A13
DQ8
5
28
W
DQ7
6
27
S2
DQ6
7
26
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
A15
DQ5
8
25
VCC
DQ4
M5M51008BVP,KV
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
9
24
NC
GND
10
23
A16
DQ3
11
22
A14
DQ2
12
21
A12
DQ1
13
20
A7
A0
Package
14
19
A6
A1
M5M51008BFP
···········3· 2pin 525mil SOP
M5M51008BVP,RV ···········3·2pin 8 X 20 mm2 TSOP
A5
A4
A2
15
18
M5M51008BKV,KR ···········3· 2pin 8 X 13.4 mm2 TSOP
16
17
A3
Outline 32P3H-E(VP), 32P3K-B(KV)
APPLICATION
Small capacity memory units
A4
A5
A6
A7
17
18
19
20
21
22
23
16
15
14
13
A3
A2
A1
A0
A12 12
A14 11
DQ1
DQ2
DQ3
GND
DQ4
DQ5
DQ6
DQ7
DQ8
S1
A16
NC
VCC
A15
S2
10
9
24
M5M51008BRV,KR
8
25
26
27
28
29
30
31
32
7
6
5
W
4
A13
A8
3
2
A9
A10
OE
1
A11
Outline 32P3H-F(RV), 32P3K-C(KR)
NC : NO CONNECTION
1
MITSUBISHI
ELECTRIC