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BCR30GM PDF预览

BCR30GM

更新时间: 2024-02-17 02:42:04
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
5页 93K
描述
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

BCR30GM 技术参数

生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.82Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:30 A
断态重复峰值电压:600 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

BCR30GM 数据手册

 浏览型号BCR30GM的Datasheet PDF文件第2页浏览型号BCR30GM的Datasheet PDF文件第3页浏览型号BCR30GM的Datasheet PDF文件第4页浏览型号BCR30GM的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR30GM  
MEDIUM POWER USE  
INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
BCR30GM  
OUTLINE DRAWING  
in mm  
2
39.2 MAX  
20.2 MAX  
2-φ4.2  
5.0 MIN  
3
2
20.1 MAX  
21.6 MAX  
30.0±0.2  
1
3
1
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
7.0  
7.0  
GATE TERMINAL  
8.25  
φ1.55(G)  
φ2.0(T1,T2)  
6.35  
1.5  
GATE  
TERMINAL  
INDICATION  
T1 TERMINAL  
INDICATION  
• IT (RMS) ...................................................................... 30A  
• VDRM ..............................................................400V/600V  
• IFGT !, IRGT !, IRGT # ...........................................50mA  
• Viso........................................................................ 2200V  
• UL Recognized: File No. E80276  
TRADEMARK  
3-φ1.3  
TYPE  
NAME  
LOT No.  
VOLTAGE  
CLASS  
Tb TEST POINT  
BCR30GM (C TYPE)  
APPLICATION  
Contactless AC switches, light dimmer,  
on/off and speed control of small induction motors, on/off control of copier lamps,  
microwave ovens  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
500  
600  
720  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
30  
Unit  
A
Commercial frequency, sine full wave 360° conduction,  
Tb=60°C  
IT (RMS)  
ITSM  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
300  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
375  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
W
W
0.5  
10  
2
V
Peak gate current  
A
Tj  
Junction temperature  
Storage temperature  
–40 ~ +125  
–40 ~ +125  
15  
°C  
Tstg  
°C  
kg·cm  
N·cm  
g
Mounting torque  
Screw M4  
1.47  
Weight  
Typical value  
26  
Viso  
Isolation voltage  
Ta=25°C, AC 1 minute, T2 · T1 · G terminal to base  
2200  
V
1. Gate open.  
Feb.1999  

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