MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
BCR25A, BCR25B
OUTLINE DRAWING
in mm
(19.6)
8.0
φ3.3 MIN
φ1.3 MIN
1
3
3
(φ14)
1
2
3
M6×1.0
T
T
1
TERMINAL
TERMINAL
1
2
3
2
BCR25A
2
GATE TERMINAL
39 MAX
30±0.2
• IT (RMS) ...................................................................... 25A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT # ........................................................50mA
• IRGT !.....................................................................75mA
2-φ4.2 MIN
8.0
φ3.3 MIN
φ1.3 MIN
1
3
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
3
φ14.2 MAX
2
BCR25B
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
10
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
600
500
600
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave, 360° conduction, Tc=92°C
25
60Hz sinewave 1 full cycle, peak value, non-repetitive
250
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
262
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
5.0
W
W
0.5
10
2.0
V
Peak gate current
A
TI
Junction temperature
Storage temperature
–20 ~ +125
–20 ~ +125
30
°C
Tstg
°C
kg·cm
N·m
—
Mounting torque
Weight
BCR25A only
2.94
BCR25A (Typical value)
BCR25B (Typical value)
18
—
g
23
✽1. Gate open.
Feb.1999