MITSUBISHI SEMICONDUCTOR TRIAC
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
BCR10CS
OUTLINE DRAWING
in mm
4
10.5 MAX
4.5
1.3
TYPE
NAME
+0.3
–0
0
VOLTAGE
CLASS
1
5
0.5
0.8
1
2 3
Measurement
point of case
temperature
2 4
T
1
TERMINAL
TERMINAL
1
2
3
4
T2
• IT (RMS) ...................................................................... 10A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA)
GATE TERMINAL
TERMINAL
3
1
T
2
✽5
TO-220S
APPLICATION
Solid state relay, hybrid IC
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
12
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
500
600
720
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
10
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
41.6
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
5
0.5
10
2
W
W
V
Peak gate current
A
Tj
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
1.2
°C
°C
g
Tstg
—
Typical value
✽1. Gate open.
Feb.1999