Datasheet > BA01232

BA01232

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		射频放大器电话
页数	文件大小	规格书
1页	20K
描述
The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone

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BA01232 数据手册

MITSUBISHI SEMICONDUCTOR

Preliminary

BA01232

Specifications are subject to change without notice.

HBT HYBRID IC

DESCRIPTION

OUTLINE DRAWING

The BA01232 is GaAs RF amplifier designed for

W-CDMA hand-held phone.

Unit : millimeters

①

②

③

⑥

FEATURES

⑤

④

4.00

Low voltage Vcc=3.5V

High power

High gain

Po=26.5dBm

Gp=27.5dB

@1920~1980MHz

@Po=26.5dBm

2stage amplifier

Internal input and output matching

Small size package 4x4x1.2mm

4.00

1.40

1.2

① Pin ④ Pout

② Vc1 ⑤ Vcb

③ Vc2 ⑥ Vref

APPLICATION

W-CDMA(UTRA/FDD) mobile transmitter

(UE Power Class 3).

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Symbol

Vcc

Parameter

Supply voltage of HPA

Input power

Condition

Ratings*

Unit

dBm

°C

ZG=ZL=50W

Tc(op)

Tstg

Operating case temp.

Storage temp.

-20 ~ +85

-30 ~ +95

°C

*Note : Each maximum rating is guaranteed independently .

ELECTRICAL CHARACTERISTICS(Ta=25°C)

Limits

TYP MAX

Symbol

Parameter

Test conditions**

No RF input

Unit

MIN

Frequency

Idle current

1920

1980 MHz

Icqt

Ict

252

Total current

PAE

r in

Power added efficiency

Input Power

-1.0

dBm

Po=26.5dBm

Vc1=Vc2=3.5V

Vref=2.9V

Return loss

Adjacent channel leakage power

at 5MHz

Adjacent channel leakage power

at 10MHz

-6

-41

-54

-38

dBc

ACLR

Vcb=2.9V

-48

-30

dBc

2Sp/3Sp

RX noise

2nd/3rd harmonics

RX band noise

dBc

-140

dBm/Hz

**NOTE : ZG=ZL=50W

3.84Mcps spreading, HPSK.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility

that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of

substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

MITSUBISHI ELECTRIC CORP.

Feb.,04

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