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2SK2973 PDF预览

2SK2973

更新时间: 2024-01-02 04:19:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体放大器小信号场效应晶体管射频小信号场效应晶体管功率放大器
页数 文件大小 规格书
3页 37K
描述
RF POWER MOS FET(VHF/UHF power amplifiers)

2SK2973 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N外壳连接:SOURCE
配置:SINGLEFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最小功率增益 (Gp):13 dB认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK2973 数据手册

 浏览型号2SK2973的Datasheet PDF文件第2页浏览型号2SK2973的Datasheet PDF文件第3页 
MITSUBISHI RF POWER MOS FET  
2SK2973  
DESCRIPTION  
2SK2973 is a MOS FET type transistor specifically designed for  
Dimensions in mm  
OUTLINE DRAWING  
4.6MAX  
1.6±0.2  
1.5±0.1  
VHF/UHF power amplifiers applications.  
FEATURES  
• High power gain:Gpe³ 13dB  
@VDD=9.6V,f=450MHz,Pin=17dBm  
• High efficiency:55% typ.  
2
3
1
• Source case type SOT-89 package  
(connected internally to source)  
0.53  
MAX  
APPLICATION  
For drive stage and output stage of power amplifiers in VHF/UHF  
1.5  
0.48MAX  
+0.03  
-0.05  
0.4  
1 : DRAIN  
2 : SOURCE  
3 : GATE  
band portable radio sets.  
3.0  
MARKING  
SOT-89  
MARKING  
TYPE No.  
K1  
LOT No.  
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)  
Ratings  
17  
Parameter  
Drain to source voltage  
Gate to source voltage  
Channel dissipation  
Junction temperature  
Storage temperature  
Conditions  
Unit  
V
Symbol  
VDSS  
VGSS  
Pch  
V
±10  
Tc=25˚C  
(Note2)  
1.5  
W
˚C  
˚C  
Tj  
150  
Tstg  
-40 to +110  
Note1: Above parameters are guaranteed independently.  
2: Solder on printed board(Copper leaf area;70´ 70mm,t=1.6mm Epoxy glass)  
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
1.2  
Max  
10  
VDS=12V, VGS=0V  
VGS=10V, VDS=0V  
VDS=7V, IDS=1mA  
µA  
µA  
V
IDSS  
IGSS  
VTH  
1
1.8  
Threshold voltage  
pF  
pF  
10  
8
Ciss  
Coss  
Pout  
hD  
VGS=10V, VDS=0V,f=1MHz  
VDS=10V, VGS=0V,f=1MHz  
1.2  
1
W
%
VDS=9.6V, Pin=50mW,f=450MHz  
45  
55  
Note: Above parameters,ratings,limits and conditions are subject to change.  
Nov. ´97  

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