品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 开关晶体管 | |
页数 | 文件大小 | 规格书 |
3页 | 103K | |
描述 | ||
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 配置: | SINGLE |
最大漏极电流 (ID): | 0.02 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK2786-11-D | MITSUBISHI | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction |
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2SK2786-T11-E | MITSUBISHI | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction |
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2SK2788 | HITACHI | Silicon N Channel MOS FET High Speed Power Switching |
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2SK2788 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching |
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2SK2788_11 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching |
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