生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.72 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ125C | ISAHAYA | P-CHANNEL, Si, SMALL SIGNAL, JFET, SC-59, SIMILAR TO TO-236, 3 PIN |
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2SJ125D | ISAHAYA | P-CHANNEL, Si, SMALL SIGNAL, JFET, SC-59, SIMILAR TO TO-236, 3 PIN |
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2SJ125-T12-1C | MITSUBISHI | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236 |
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2SJ125-T12-1D | MITSUBISHI | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236 |
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2SJ126 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
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2SJ127 | RENESAS | 10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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