品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 放大器晶体管 | |
页数 | 文件大小 | 规格书 |
2页 | 81K | |
描述 | ||
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MICRO-3 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 390 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1630-T11R | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC |
获取价格 |
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2SA1630-T11T | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC |
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2SA1633 | ISC | Silicon PNP Power Transistors |
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2SA1633 | JMNIC | Silicon PNP Power Transistors |
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2SA1633/D | ROHM | 10A, 150V, PNP, Si, POWER TRANSISTOR, TO-247 |
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2SA1633/DE | ROHM | Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plasti |
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